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Microwave Photonics Systems Based on Whispering-gallery-mode Resonators
Published on: August 5, 2013
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Whispering gallery mode lasing in optically isolated III-nitride nanorings
Optics Letters
|June 2, 2015
Summary
III-nitride nanorings were fabricated using hybrid-nanosphere-lithography and laser lift-off. This method enhances optical confinement and enables room-temperature lasing at 421.5 nm, paving the way for advanced photonic devices.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Whispering gallery resonant modes in nanostructures are crucial for photonic devices.
- Minimizing optical coupling to the substrate is essential for enhancing light confinement within resonant cavities.
- III-nitride materials offer unique optoelectronic properties for light emission applications.
Purpose of the Study:
- To demonstrate the fabrication of III-nitride nanorings.
- To investigate methods for maximizing optical confinement in nanoring cavities.
- To achieve optically pumped lasing in III-nitride nanorings at room temperature.
Main Methods:
- Fabrication of III-nitride nanorings using hybrid-nanosphere-lithography.
- Employing laser lift-off processes for material transfer.
- Utilizing an interfacial metallic layer to eliminate substrate optical coupling.
- Characterization of optical properties and lasing performance.
Main Results:
- Successful fabrication of III-nitride nanorings with a tapered cross-sectional profile.
- Elimination of substrate optical coupling, leading to enhanced optical confinement.
- Observation of optically pumped lasing at room temperature with a dominant peak at 421.5 nm.
- Achieved threshold energy density of approximately 6.5 mJ/cm².
- Identified etch-induced sidewall roughness as a cause for light scattering and mode splitting.
Conclusions:
- The demonstrated fabrication technique effectively produces III-nitride nanorings with enhanced optical confinement.
- The nanorings exhibit efficient room-temperature lasing, indicating potential for photonic applications.
- Sidewall roughness presents a challenge that needs to be addressed for improved device performance and confinement.

