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Whispering-gallery mode InGaN microdisks on GaN substrates.

H Zi, W Y Fu, F Tabataba-Vakili

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    |July 16, 2021
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    Summary
    This summary is machine-generated.

    III-nitride microdisks on GaN substrates achieve high internal quantum efficiency and low lasing thresholds. These devices support whispering-gallery modes for efficient light emission, demonstrating potential for advanced optoelectronics.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • III-nitride materials offer unique optoelectronic properties.
    • Homoepitaxial growth on Gallium Nitride (GaN) substrates enables high-quality material fabrication.
    • Microdisk resonators are crucial for efficient light confinement and emission.

    Purpose of the Study:

    • To demonstrate III-nitride microdisks fabricated on GaN substrates.
    • To investigate the optical properties and lasing performance of these microdisks.
    • To explore their potential for optoelectronic applications.

    Main Methods:

    • Fabrication of microdisks using III-nitride materials grown epitaxially on GaN substrates.
    • Utilizing microsphere lithography for precise patterning of microdisk sidewalls.
    • Characterization using photoluminescence and electroluminescence spectroscopy.
    • Analysis of whispering-gallery modes (WGMs) and lasing thresholds.

    Main Results:

    • Achieved high internal quantum efficiency of approximately 40% due to lattice-matched growth and low dislocation density.
    • Demonstrated optically smooth sidewalls in 8 µm-diameter microdisks, facilitating whispering-gallery mode formation.
    • Observed optically pumped lasing with a low threshold of ~5.2 mJ/cm² and a quality (Q) factor of ~3000 at 436.8 nm.
    • Confirmed electroluminescent operation supporting WGMs, consistent with simulations.

    Conclusions:

    • Homoepitaxial III-nitride microdisks on GaN substrates exhibit excellent optical properties.
    • The fabricated microdisks demonstrate efficient lasing and electroluminescence, supporting WGMs.
    • These results highlight the potential of III-nitride microdisks for advanced optoelectronic devices.