Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

844
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
844
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

449
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
449
Types of Semiconductors01:20

Types of Semiconductors

877
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
877

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Novel Low-Voltage Silicon MEMS Resonators With High f×Q Product Inspired From Bell Plates.

IEEE transactions on ultrasonics, ferroelectrics, and frequency control·2025
Same author

Intrinsic polarity inversion in III-nitride waveguides for efficient nonlinear interactions.

Optics express·2023
Same author

Up to 300 K lasing with GeSn-On-Insulator microdisk resonators.

Optics express·2022
Same author

Whispering-gallery mode InGaN microdisks on GaN substrates.

Optics express·2021
Same author

Immunogenicity and safety of two monovalent rotavirus vaccines, ROTAVAC® and ROTAVAC 5D® in Zambian infants.

Vaccine·2021
Same author

First impression of teeth design on others: A facial and personality analysis in the Central Indian population.

Nigerian journal of clinical practice·2019
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: Aug 26, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.5K

Low-loss GaN-on-insulator platform for integrated photonics.

M Gromovyi, M El Kurdi, X Checoury

    Optics Express
    |October 13, 2022
    PubMed
    Summary
    This summary is machine-generated.

    III-Nitride semiconductors enable integrated photonics with a wide transparency window. This study demonstrates a GaN-on-insulator platform on silicon for efficient second-order nonlinear conversions at telecommunication wavelengths.

    More Related Videos

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    8.1K
    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
    05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    9.7K

    Related Experiment Videos

    Last Updated: Aug 26, 2025

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    8.5K
    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    8.1K
    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
    05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    9.7K

    Area of Science:

    • Materials Science
    • Photonics
    • Semiconductor Physics

    Background:

    • III-Nitride semiconductors offer broad transparency for nonlinear optics.
    • On-chip integrated photonics requires efficient nonlinear conversion platforms.
    • Gallium Nitride (GaN) is a key III-Nitride material.

    Purpose of the Study:

    • To demonstrate a novel photonics platform using epitaxial Gallium Nitride-on-insulator (GaN-on-insulator) on silicon.
    • To achieve high-quality factor resonators for telecommunication wavelengths.
    • To demonstrate resonant second harmonic generation (SHG) for nonlinear optical applications.

    Main Methods:

    • Epitaxial growth of GaN on silicon.
    • Wafer bonding to transfer GaN-on-insulator onto SiO2.
    • Fabrication of photonic devices.
    • Characterization of quality factors and nonlinear optical conversion efficiency.

    Main Results:

    • Achieved high quality factors (up to 230,000) at telecommunication wavelengths.
    • Demonstrated resonant second harmonic generation (SHG).
    • Obtained a continuous wave (CW) conversion efficiency of 0.24%/W for SHG.

    Conclusions:

    • The GaN-on-insulator on silicon platform is suitable for integrated photonics.
    • High Q-factors and efficient nonlinear conversion are achievable.
    • This platform enables on-chip second-order nonlinear optical processes.