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Up to 300 K lasing with GeSn-On-Insulator microdisk resonators.

A Bjelajac, M Gromovyi, E Sakat

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    Summary
    This summary is machine-generated.

    Germanium-tin (GeSn) alloys enable room-temperature lasing up to 300 K. This breakthrough in Group-IV materials is achieved using microdisk resonators with strain engineering and high tin content.

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    Area of Science:

    • Semiconductor Physics
    • Materials Science
    • Optoelectronics

    Background:

    • Germanium-tin (GeSn) alloys are key Group-IV materials for optoelectronic applications.
    • Achieving direct band gap properties in GeSn is crucial for laser integration.
    • Current challenges include realizing efficient lasing at room temperature.

    Purpose of the Study:

    • To demonstrate room-temperature lasing in GeSn alloys.
    • To enable CMOS-compatible laser integration using Group-IV materials.
    • To explore the potential of GeSn-On-Insulator platforms for optoelectronics.

    Main Methods:

    • Fabrication of microdisk resonators on a GeSn-On-Insulator platform.
    • Utilizing strain engineering techniques.
    • Employing a thick layer of high tin (Sn) content GeSn.

    Main Results:

    • Successful room-temperature lasing achieved up to 300 K.
    • Demonstrated the viability of GeSn for laser applications.
    • Confirmed the effectiveness of strain engineering and high Sn content.

    Conclusions:

    • GeSn alloys are a promising material for CMOS-compatible lasers.
    • Room-temperature lasing in GeSn is attainable with optimized fabrication.
    • This work paves the way for integrated photonic devices on silicon platforms.