Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Dynamic modulation of ionic and electronic pathways in flexible SnS<sub>2</sub>-based interdigitated solid-state supercapacitors.

Nanoscale·2026
Same author

Simulation-Based Design of a Silicon SPAD with Dead-Space-Aware Avalanche Region for Picosecond-Resolved Detection.

Sensors (Basel, Switzerland)·2025
Same author

A Human EEG Dataset for Multisensory Perception and Mental Imagery.

Scientific data·2025
Same author

Atomic Engineering of Bifunctional Core-Shell Catalysts with Dual Single-Atom and Cobalt Nanoparticles for Boosting ORR and OER Kinetics in Zn-Air Batteries.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Carbon Nanotubes for Rechargeable Na/Cl<sub>2</sub> Batteries.

Journal of the American Chemical Society·2025
Same author

Investigation of the Electrochemical Behavior of CuO-NiO-Co<sub>3</sub>O<sub>4</sub> Nanocomposites for Enhanced Supercapacitor Applications.

Materials (Basel, Switzerland)·2024

Related Experiment Video

Updated: Apr 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.2K

Flat Panel Light Source with Lateral Gate Structure Based on SiC Nanowire Field Emitters.

Meng-Jey Youh1, Chun-Lung Tseng2, Meng-Han Jhuang3

  • 1Department of Information Technology, Hsing Wu University, New Taipei City 244, Taiwan, R.O.C.

Scientific Reports
|June 5, 2015
PubMed
Summary

A novel lateral-gate field-emission light source using silicon carbide nanowires achieves high brightness and uniformity. This cost-effective screen-printed device offers tunable luminance for advanced display applications.

More Related Videos

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

8.4K
Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

10.0K

Related Experiment Videos

Last Updated: Apr 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.2K
Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

8.4K
Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells
14:37

Ambient Method for the Production of an Ionically Gated Carbon Nanotube Common Cathode in Tandem Organic Solar Cells

Published on: November 5, 2014

10.0K

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Optoelectronics

Background:

  • Field-emission displays (FEDs) require efficient electron sources with high luminance and uniformity.
  • Existing designs often face challenges in cost-effectiveness and precise control of emission characteristics.

Purpose of the Study:

  • To demonstrate a novel lateral-gate field-emission light source with superior luminance and uniformity.
  • To investigate the performance of silicon carbide (SiC) nanowire emitters in a cost-effective, screen-printed triode structure.

Main Methods:

  • Fabrication of a lateral-gate triode structure using SiC nanowire emitters on a silver cathode and laterally placed silver gate electrodes.
  • Utilizing a cost-effective screen printing technique for patterning electrodes on soda lime glass.
  • Characterization of luminance, luminance uniformity, and current leakage under varying gate and anode voltages.

Main Results:

  • Achieved a maximum luminance of 10,952 cd/cm² with >90% luminance uniformity.
  • Demonstrated tunable luminance characteristics with a lateral-gate structure exhibiting small area coverage (2.04%-4.74%).
  • Operated the device at a gate voltage of 500 V and anode voltage of 4000 V, with an anode current of 1.44 mA and ~10% current leakage.

Conclusions:

  • The novel lateral-gate structure enables high-performance field-emission lighting with excellent brightness and uniformity.
  • Screen printing offers a scalable and cost-effective method for fabricating these advanced field-emission devices.
  • The demonstrated technology holds promise for next-generation display and lighting applications.