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Bistable electrical switching and nonvolatile memory effect in carbon
Yanmei Sun1, Lei Li, Dianzhong Wen
1HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
Abstract:
The electrical conductance switching behavior and nonvolatile memory effects in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
Pedot:
PSS and single-wall carbon nanotubes (SWCNTs) composite thin films have been investigated. The effect of doping level on electrical conductance switching behavior of an indium tin oxide/
Pedot:
PSS + SWCNTs/aluminum (ITO/PEDOT:PSS + SWCNTs/Al) sandwich structure has been reported. The ITO/(PEDOT:PSS + SWCNTs)/Al devices show current bistability. Moreover, the ON/OFF state current ratio is in an extent of 10(2)-10(4). The OFF state current increased with the decreasing SWCNTs content in the composite film, and the ON/OFF state current ratio of the device increases with the increase in SWCNTs content of the composite film. Thus, by varying the doping level of SWCNTs in
Pedot:
PSS composite thin films, the electrical conductance switching behavior of ITO/PEDOT:PSS + SWCNTs/Al can be modulated in a controlled manner.
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