Tm:KLu(WO(4))(2) microchip laser Q-switched by a graphene-based saturable absorber

We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO₄)₂ crystal cut along the N_g dielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 µJ energy are achieved.