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Related Concept Videos

X-ray Crystallography02:18

X-ray Crystallography

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The size of the unit cell and the arrangement of atoms in a crystal may be determined from measurements of the diffraction of X-rays by the crystal, termed X-ray crystallography.
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...
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In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...
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X-ray diffraction or XRD is an analytical tool that utilizes X-rays to study ordered structures such as crystalline organic and inorganic samples, polycrystalline materials, proteins, carbohydrates, and drugs.
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Updated: Apr 10, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Nonlinear diffraction in orientation-patterned semiconductors.

Pawel Karpinski, Xin Chen, Vladlen Shvedov

    Optics Express
    |June 16, 2015
    PubMed
    Summary
    This summary is machine-generated.

    Researchers experimentally demonstrated nonlinear diffraction in semiconductors using a novel transverse geometry. This study identifies three types of second-order nonlinear diffraction and offers a new method for diagnosing nonlinear coefficients in semiconductors.

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    Area of Science:

    • Nonlinear optics
    • Semiconductor physics
    • Materials science

    Background:

    • Orientation-patterned semiconductors enable nonlinear optical phenomena.
    • Transverse geometries offer new possibilities for nonlinear interactions.
    • Quasi-phase matching is crucial for efficient nonlinear frequency conversion.

    Purpose of the Study:

    • To experimentally demonstrate nonlinear diffraction in orientation-patterned semiconductors.
    • To identify and classify different types of second-order nonlinear diffraction.
    • To extend transverse nonlinear parametric interactions for infrared frequency conversion.

    Main Methods:

    • Utilizing a novel transverse geometry of interaction.
    • Analyzing configurations of quasi-phase matching conditions.
    • Experimental demonstration of nonlinear diffraction phenomena.

    Main Results:

    • Identification of three distinct types of second-order nonlinear diffraction: Čerenkov, Raman-Nath, and Bragg diffraction.
    • Demonstration of nonlinear Čerenkov diffraction governed by longitudinal quasi-phase matching.
    • Demonstration of nonlinear Raman-Nath diffraction governed by transverse quasi-phase matching.
    • Demonstration of nonlinear Bragg diffraction governed by full vectorial quasi-phase matching.

    Conclusions:

    • The study successfully demonstrates nonlinear diffraction in orientation-patterned semiconductors.
    • Three types of second-order nonlinear diffraction were identified based on quasi-phase matching conditions.
    • The findings extend transverse nonlinear parametric interactions for infrared frequency conversion in semiconductors.
    • A nondestructive method for diagnosing second-order nonlinear coefficients in semiconductors was developed.