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Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Updated: Apr 10, 2026

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

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InGaN light-emitting diode stripes with reduced luminous exitance.

W S Cheung, Y F Cheung, H T Chen

|June 16, 2015

Summary

This summary is machine-generated.

Stripe-shaped Indium Gallium Nitride (InGaN) light-emitting diodes (LEDs) with laser-micromachined inclined sidewalls show improved light extraction efficiency. This design enhances performance and suitability for diverse lighting applications.

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Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

Area of Science:

Optoelectronics
Semiconductor devices
Solid-state lighting

Background:

Indium Gallium Nitride (InGaN) light-emitting diodes (LEDs) are crucial for modern lighting.
Optimizing light extraction efficiency and thermal management is key for LED performance.
Current LED chip designs may limit light spreading and increase junction temperatures.

Purpose of the Study:

To demonstrate InGaN LEDs with stripe geometries and partially-inclined sidewalls.
To investigate the impact of 3D chip shaping on light extraction efficiency and junction temperature.
To assess the suitability of these enhanced LEDs for various lighting applications.

Main Methods:

Fabrication of InGaN LEDs with stripe geometries.
Laser-micromachining of chip sidewalls to create partially-inclined surfaces.
Measurement and simulation (ray-trace) of light extraction efficiency.
Analysis of junction temperature reduction and emission area increase.

Main Results:

Demonstration of stripe geometry InGaN LEDs with enhanced light spreading.
Light extraction efficiency increased by approximately 12% (8% via simulation).
Reduction in junction temperatures observed due to improved light extraction.
Effective emission area increased fourfold compared to cubic chips.

Conclusions:

3D chip geometries, specifically stripe designs with inclined sidewalls, significantly enhance LED performance.
The improved efficiency and reduced thermal load make these LEDs highly suitable for general lighting.
This advancement offers a pathway to more efficient and effective solid-state lighting solutions.