Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Design Example: Frog Muscle Response

Design Example: Frog Muscle Response

A student is tasked to work on an intriguing experiment involving an RL (Resistor-Inductor) circuit to study the muscle response of a frog's leg to electrical stimulation. The RL circuit plays a crucial role in this experiment, providing the means to control and measure the electrical impulses that trigger muscle contraction.
When the switch connecting the RL circuit is closed, a brief muscle contraction is observed. This is because, at a steady state, the inductor acts like a short...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Plasma acylcarnitine dysregulation associated with CPT1-mediated metabolism contributes to oral carcinogenesis.

Scientific reports·2026

Same author

Unraveling the impact of heat stress on meat quality: integrating physiology, epigenetics, and postmortem biochemistry.

NPJ science of food·2026

Same author

Digitally programmable microfluidic valving for autonomous, high-resolution continuous chromatographic purification.

Lab on a chip·2026

Same author

Trends of Microorganisms and Antibiotic Resistance Isolated from Patients with Bacterial Keratitis from a Tertiary Hospital in Southeastern Korea: A 26-Year Retrospective Medical Record Review.

Antibiotics (Basel, Switzerland)·2026

Same author

A Rare Case of Acute Promyelocytic Leukemia with ider(17)(q10)t(15;17)(q22;q21) and FLT3-ITD Mutation.

Clinical laboratory·2026

Same author

Association Between Sclerostin and Sarcopenia-Related Functional Decline in Older Women.

Diagnostics (Basel, Switzerland)·2026

Search research articles

Related Experiment Video

Updated: Apr 8, 2026

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Nanofilament Dynamics in Resistance Memory: Model and Validation.

Yang Lu¹, Jong Ho Lee¹, I-Wei Chen¹

¹Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6272, United States.

|June 24, 2015

Summary

This summary is machine-generated.

Resistive random-access memory (ReRAM) uses a simple circuit model to explain nanoscale filament switching. This model accurately predicts device behavior across various sizes and electrical stimuli.

Keywords:

Avrami kinetics nanofilaments relaxation resistance memory switching dynamics

More Related Videos

Finite Element Modelling of a Cellular Electric Microenvironment

Finite Element Modelling of a Cellular Electric Microenvironment

Published on: May 18, 2021

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

Published on: May 12, 2023

Related Experiment Videos

Last Updated: Apr 8, 2026

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Finite Element Modelling of a Cellular Electric Microenvironment

Finite Element Modelling of a Cellular Electric Microenvironment

Published on: May 18, 2021

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

Published on: May 12, 2023

Area of Science:

Materials Science
Electrical Engineering
Solid-State Physics

Background:

Filamentary resistive random-access memory (ReRAM) relies on nanoscale electrochemical changes for state switching.
Understanding the link between nanoscale filament evolution and macroscopic device behavior is crucial for ReRAM development.

Purpose of the Study:

To develop a simplified empirical equivalent circuit model for filamentary ReRAM.
To explain diverse experimental observations in filamentary ReRAMs using a unified model.

Main Methods:

Modeling nanoscale filament elements as a variable resistor and capacitor.
Analyzing collective system dynamics, including power-law time-relaxation of capacitance.
Simulating responses of HfOx ReRAMs to DC/quasi-static and pulse electrical stimulation.

Main Results:

A simple circuit model with a voltage-switched variable resistor and capacitor effectively represents nanoscale filamentary ReRAM elements.
The model accurately explains observed switching kinetics, including Avrami-like behavior.
The model accounts for pulse-rate dependence in switching voltages for different ReRAM sizes.

Conclusions:

The proposed equivalent circuit model provides a powerful tool for understanding and predicting filamentary ReRAM behavior.
This simplified model bridges the gap between nanoscale filament dynamics and device-level electrical responses.
The findings facilitate the design and optimization of ReRAM devices for various applications.