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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Quantum phase transitions in interfacing two gapped systems of ordinary fermions driven by external strain and atomic
Li Chen1, Kai Chang, X G Zheng
1Institute of Condensed Matter Physics, Linyi University, Shandong 276000, China. chenli@lyu.edu.cn.
Abstract:
We study how the electronic structure of a single bilayer Bi on a single quintuple layer Bi2Se3 (Bi2Te3) changes with interface polarization, strain and H adsorption using first-principles calculations. We find that for strained systems the Dirac cone state does not show in the band gap. Coupled with strain and H adsorption, the six spin-polarized Dirac cones in the band gap are created by the interfacing two gapped films. The internal electrical field can result in variations in the work function relative to Bi and Bi2Se3 surfaces. Our findings confirm that the interface polarization, strain and atomic adsorption are the effective means to manipulate electronic structures and topological states on non-metallic surfaces, which could be helpful for realizing atomically thin spintronic devices.
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