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Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Bilu Liu1, Marianne Köpf2, Ahmad N Abbas1

  • 1Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.

Advanced Materials (Deerfield Beach, Fla.)
|June 27, 2015
PubMed

Keywords:
anisotropicband gapsblack arsenicblack phosphorusinfrared semiconductorslayered materials

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