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Updated: Apr 8, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Crack tip shielding observed with high-resolution transmission electron microscopy
Damar Rastri Adhika1, Masaki Tanaka2, Takeshi Daio3
1Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan.
Dislocation shielding at crack tips was experimentally confirmed at the atomic scale. This study used high-resolution transmission electron microscopy (HRTEM) and geometric phase analysis (GPA) to measure local strain fields.
Area of Science:
- Materials Science
- Solid Mechanics
- Nanotechnology
Background:
- Understanding crack propagation is crucial in materials science.
- Dislocation shielding is a theoretical mechanism that can mitigate crack growth.
- Experimental validation at the atomic scale is needed.
Purpose of the Study:
- To experimentally verify the existence of dislocation shielding at a crack tip.
- To measure the local strain field at the atomic scale.
- To compare experimental results with elastic theory predictions.
Main Methods:
- Utilized single crystalline (110) silicon wafers.
- Introduced cracks using a Vickers indenter at room temperature.
- Employed high-resolution transmission electron microscopy (HRTEM) for imaging.
- Applied geometric phase analysis (GPA) for precise strain measurement.
Main Results:
- Successfully observed the crack tip region at the atomic scale.
- Measured a compressive strain field directly in front of the crack tip.
- The experimental strain field was in excellent agreement with theoretical calculations based on elastic theory.
Conclusions:
- Provided the first experimental proof of dislocation shielding at the atomic scale.
- Demonstrated the effectiveness of HRTEM and GPA in characterizing nanoscale strain fields.
- Validated the role of dislocation shielding in modifying the stress state at crack tips.
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