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Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography
Alireza Kazemi1, Xiang He1, Seyedhamidreza Alaie2
1Center for High Technology Materials, University of New Mexico, NM 87106, USA.
Scientific Reports
|July 2, 2015
Summary
Researchers fabricated semiconducting graphene nanomesh (GNM) using interferometric lithography. This cost-effective method creates large-scale graphene sheets with tunable bandgaps for electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene nanostructures exhibit unique quantum confinement effects.
- Developing large-scale, cost-effective semiconducting graphene is crucial for advanced electronics.
Purpose of the Study:
- To fabricate uniform, chip-scale semiconducting graphene nanomesh (GNM) using interferometric lithography.
- To investigate the electronic properties and potential applications of GNM.
Main Methods:
- Interferometric lithography was employed to create GNM with sub-10 nm neck widths.
- Raman spectroscopy was used to analyze structural changes.
- Field-effect transistor (FET) devices were fabricated and characterized.
Main Results:
- Uniform, chip-scale GNM with sub-10 nm neck widths was successfully fabricated.
- GNM exhibits an estimated room temperature energy bandgap of ~30 meV.
- Raman spectra showed blue shift and broadening of the G band due to quantum confinement.
- GNM FETs demonstrated a drive current of ~3.9 μA/μm and ON/OFF ratios of ~35 at room temperature.
- ON/OFF current ratio enhanced 24-fold at 77 K.
Conclusions:
- Interferometric lithography offers a fast, low-cost, high-yield method for producing semiconducting GNM.
- GNM shows promise for large-scale electronic device applications.
- Quantum confinement effects significantly influence GNM properties.
