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Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene

PhaniKiran Vabbina1, Nitin Choudhary2, Al-Amin Chowdhury1

  • 1†INSYST Laboratory, Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, United States.

ACS Applied Materials & Interfaces
|July 7, 2015
PubMed

Keywords:
2D hybrid materialsCVDSchottky junctionatomic layer MoS2graphenephotodetector

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