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High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles
Ji Hyung Jung1, Sunghwan Kim2, Hyeonjung Kim2
1Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 790-784, Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|July 9, 2015
Summary
Novel nano-floating gate memory (NFGM) devices using cobalt ferrite nanoparticles demonstrate high performance and flexibility. These organic memory devices offer excellent stability and simplified fabrication for advanced integrated circuits.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Nano-floating gate memory (NFGM) devices are gaining traction for integrated circuits due to their performance and multilevel programming capabilities.
- Nanostructured materials are key charge trap sites in NFGM devices, influencing their memory characteristics.
Purpose of the Study:
- To fabricate and investigate novel NFGM devices utilizing semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites.
- To explore the impact of CoFe2O4 NP size on memory performance, energy levels, and particle interactions.
Main Methods:
- Synthesis of monodisperse CoFe2O4 NPs with varying diameters via thermal decomposition.
- Fabrication of NFGM devices embedding CoFe2O4 NPs within a pentacene semiconductor matrix.
- Characterization of memory performance, including memory window, read current on/off ratio, data retention, and switching behavior.
Main Results:
- CoFe2O4 NP-based NFGM devices achieved a large memory window (≈73.84 V) and high read current on/off ratio (≈2.98 × 10^3).
- Fast switching speeds were observed, attributed to the charge trapping/release efficiency of oleate-coated CoFe2O4 NPs acting as a tunneling dielectric.
- Devices exhibited excellent thermal stability and remarkable mechanical/electrical stability when fabricated on flexible plastic substrates.
Conclusions:
- CoFe2O4 NPs are effective charge trap sites for high-performance NFGM devices.
- The oleate layer on NPs simplifies fabrication and enhances device performance.
- The developed NFGM devices offer a viable pathway for creating highly flexible, stable, and high-performance organic memory.
