Quantum dot semiconductor disk laser at 1.3  μm

Area of Science:

• Optoelectronics
• Semiconductor Lasers
• Quantum Dot Technology

Background:

• Semiconductor disk lasers (SDLs) are crucial for various applications.
• Achieving high output power from SDLs at specific wavelengths, like 1.3 μm, remains a challenge.
• Quantum dots (QDs) offer unique optoelectronic properties for laser gain media.

Purpose of the Study:

• To demonstrate a novel semiconductor disk laser (SDL) operating at 1.3 μm.
• To investigate the potential of InAs/InGaAs quantum dot (QD) gain media for 1.3 μm SDLs.
• To achieve high output power from QD-based SDLs in this spectral region.

Main Methods:

• Fabrication of a semiconductor disk laser (SDL) utilizing an active region with InAs quantum dots (QDs) embedded in InGaAs quantum wells (QWs).
• Characterization of the SDL's output power and performance at a wavelength of 1.3 μm.
• Testing the laser performance at a controlled temperature of 15°C.

Main Results:

• Successful operation of an SDL emitting at a wavelength of 1.3 μm.
• Achieved an output power exceeding 200 mW at 15°C.
• This output power is the highest reported for QD-based SDLs at 1.3 μm.

Conclusions:

• The feasibility of using quantum dot (QD) gain media for fabricating semiconductor disk lasers (SDLs) emitting at 1.3 μm is demonstrated.
• The developed QD-based SDL shows promising high-power performance.
• This work paves the way for advanced 1.3 μm laser sources.