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1.34 μm VECSEL mode-locked with a GaSb-based SESAM.

Antti Härkönen, Soile Suomalainen, Antti Rantamäki

|July 14, 2018

Summary

This summary is machine-generated.

We demonstrated mode locking of a 1.34 μm vertical external cavity surface emitting laser using a Gallium Antimonide (GaSb)-based semiconductor saturable absorber mirror (SESAM). This GaSb-based SESAM offers a fast recovery time, enabling efficient mode locking for lasers.

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Area of Science:

Optics and Photonics
Materials Science
Semiconductor Physics

Background:

Vertical external cavity surface emitting lasers (VECSELs) are crucial for various optical applications.
Mode locking VECSELs requires efficient saturable absorbers, often limited by material systems.
The 1.3-2 μm wavelength range is important but lacks sufficient mode-locking solutions.

Purpose of the Study:

To demonstrate mode locking of a 1.34 μm VECSEL using a novel GaSb-based semiconductor saturable absorber mirror (SESAM).
To investigate the performance and characteristics of the GaSb-based SESAM for laser mode locking.
To explore the potential of GaSb-based materials for mode locking in the under-addressed 1.3-2 μm range.

Main Methods:

Fabrication of a GaSb-based SESAM with six AlGaSb quantum wells (QWs) and an absorption edge at ~1.37 μm.
Integration of the SESAM into a 1.34 μm VECSEL for mode-locking experiments.
Characterization of the SESAM's absorption recovery using pump-probe measurements.
Analysis of the mode-locked laser output, including repetition rate, pulse duration, and peak power.

Main Results:

Successful mode locking of the 1.34 μm VECSEL was achieved using the GaSb-based SESAM.
The SESAM exhibited a fast absorption recovery time on the picosecond timescale.
The mode-locked laser produced a pulse train with a 1.03 GHz repetition rate, ~5 ps pulse duration, and ~1.67 W peak power.
The AlGaSb/GaSb QWs allowed for lattice-matched growth and required fewer Bragg reflector layers.

Conclusions:

GaSb-based SESAMs are effective for mode locking VECSELs at 1.34 μm.
The demonstrated SESAM offers advantages in material growth and performance.
This work paves the way for utilizing GaSb-based SESAMs for mode locking across the 1.3-2 μm wavelength range.