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Quantum dot semiconductor disk laser at 1.3  μm.

Antti Rantamäki, Grigorii S Sokolovskii, Sergey A Blokhin

    Optics Letters
    |July 16, 2015
    PubMed
    Summary

    We developed a semiconductor disk laser (SDL) using InAs quantum dots (QDs) emitting at 1.3 μm. This QD-based laser achieves over 200 mW output power, a record for this wavelength.

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    Area of Science:

    • Optoelectronics
    • Semiconductor Lasers
    • Quantum Dot Technology

    Background:

    • Semiconductor disk lasers (SDLs) are crucial for various applications.
    • Achieving high output power from SDLs at specific wavelengths, like 1.3 μm, remains a challenge.
    • Quantum dots (QDs) offer unique optoelectronic properties for laser gain media.

    Purpose of the Study:

    • To demonstrate a novel semiconductor disk laser (SDL) operating at 1.3 μm.
    • To investigate the potential of InAs/InGaAs quantum dot (QD) gain media for 1.3 μm SDLs.
    • To achieve high output power from QD-based SDLs in this spectral region.

    Main Methods:

    • Fabrication of a semiconductor disk laser (SDL) utilizing an active region with InAs quantum dots (QDs) embedded in InGaAs quantum wells (QWs).
    • Characterization of the SDL's output power and performance at a wavelength of 1.3 μm.
    • Testing the laser performance at a controlled temperature of 15°C.

    Main Results:

    • Successful operation of an SDL emitting at a wavelength of 1.3 μm.
    • Achieved an output power exceeding 200 mW at 15°C.
    • This output power is the highest reported for QD-based SDLs at 1.3 μm.

    Conclusions:

    • The feasibility of using quantum dot (QD) gain media for fabricating semiconductor disk lasers (SDLs) emitting at 1.3 μm is demonstrated.
    • The developed QD-based SDL shows promising high-power performance.
    • This work paves the way for advanced 1.3 μm laser sources.