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Growth and Etching of Monolayer Hexagonal Boron Nitride
Lifeng Wang1,2,3, Bin Wu3, Lili Jiang3
1School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, P. R. China.
Advanced Materials (Deerfield Beach, Fla.)
|July 18, 2015
Abstract:
The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first observed and explained.

