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Mode Profiling of Semiconductor Nanowire Lasers
Dhruv Saxena1, Fan Wang1, Qian Gao1
1Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, A.C.T. 2601, Australia.
Nano Letters
|July 21, 2015
Summary
We identified lasing modes in semiconductor nanowire lasers using microphotoluminescence. This method precisely characterizes optical modes in nanolasers integrated on substrates.
Area of Science:
- Optics and Photonics
- Materials Science
- Semiconductor Physics
Background:
- Semiconductor nanowires are promising for miniaturized laser applications.
- Understanding lasing modes is crucial for optimizing nanolaser performance.
- Characterizing modes in substrate-integrated nanolasers presents unique challenges.
Purpose of the Study:
- To experimentally determine the lasing mode(s) in optically pumped semiconductor nanowire lasers.
- To develop a reliable technique for identifying optical modes in nanolasers.
- To validate the technique by comparing experimental results with numerical simulations.
Main Methods:
- Microphotoluminescence (μ-PL) spectroscopy was employed.
- Spatially resolved and angle-resolved far-field emission profiles were characterized.
- Single indium phosphide (InP) nanowire lasers on a SiO2 substrate were used as a model system.
Main Results:
- Experimentally obtained polarization-dependent far-field emission profiles were analyzed.
- The experimental data showed excellent agreement with numerical simulations.
- Unambiguous identification of the lasing modes in the nanowire lasers was achieved.
Conclusions:
- The developed microphotoluminescence technique effectively identifies lasing modes in semiconductor nanowire lasers.
- This method is applicable to various nanolaser configurations, including vertical and horizontal orientations on substrates.
- The findings contribute to the advancement of nanophotonics and integrated optoelectronics.
