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Related Experiment Video

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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm.

F Gao, S Luo, H M Ji

    Optics Express
    |July 21, 2015
    PubMed
    Summary

    We developed a tunable external-cavity laser using InAs/InP quantum dots (QDs). High AsH₃ flow during growth improved optical gain, enabling broadband tuning from 1436.6 nm to 1577 nm.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Quantum dots (QDs) offer tunable optoelectronic properties.
    • External-cavity lasers require high-gain active media for broad tunability.
    • Metal-organic vapor phase epitaxy (MOVPE) is a key technique for QD growth.

    Purpose of the Study:

    • To develop a broadly tunable external-cavity laser using InAs/InP quantum dots.
    • To optimize QD growth conditions for enhanced optical gain.
    • To achieve a wide tuning range and significant output power.

    Main Methods:

    • Growing InAs/InP quantum dots using metal-organic vapor phase epitaxy (MOVPE).
    • Implementing high AsH₃ flow during post-deposition interruption to promote QD ripening.
    • Integrating QD active medium with anti-reflection/high-reflection facet coatings in an external-cavity laser design.

    Main Results:

    • High AsH₃ flow significantly enhanced QD ripening and optical gain in lower energy states.
    • A broadly tunable InAs/InP QD external-cavity laser was successfully realized.
    • Achieved a wide tuning range of 140.4 nm (1436.6 nm to 1577 nm) with a maximum output power of 6 mW.

    Conclusions:

    • Optimized MOVPE growth, specifically high AsH₃ flow, is crucial for high-performance QD lasers.
    • InAs/InP QDs are a promising material for broadband tunable laser applications.
    • The developed QD external-cavity laser demonstrates significant potential for various photonic applications.