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Free-carrier electro-refraction modulation based on a silicon slot waveguide with ITO
Optics Express
|July 21, 2015
Summary
This study introduces an ultra-compact silicon phase modulator using Indium-Tin-Oxide (ITO). The device achieves a 180-degree phase shift in under 5 micrometers, paving the way for advanced integrated silicon photonics.
Area of Science:
- Photonics and Optoelectronics
- Materials Science
- Electrical Engineering
Background:
- Silicon photonics faces limitations in modulator performance.
- Indium-Tin-Oxide (ITO) offers tunable permittivity and epsilon-near-zero (ENZ) effects for advanced optical devices.
Purpose of the Study:
- To propose and simulate an ultra-compact integrated phase modulator utilizing a silicon slot waveguide and ITO.
- To leverage the electrically tunable ENZ effect in ITO for efficient phase modulation.
Main Methods:
- Device fabrication involved a silicon slot waveguide with a thin ITO film.
- Simulations were performed in the near-infrared regime to analyze performance.
- Bias voltage was applied to induce free-carrier accumulation and tune permittivity.
Main Results:
- A phase shift of π radians was achieved within a device length of <5 μm at 210 THz with a 2 V swing.
- High modulation efficiency of V(π)L(π)~0.0071 V·cm was demonstrated.
- A large device bandwidth of ~70 GHz was predicted.
Conclusions:
- The proposed ITO-based silicon phase modulator is ultra-compact and highly efficient.
- This technology holds significant potential for next-generation integrated silicon photonics.
- The electrically tunable ENZ effect in ITO is crucial for high-performance optoelectronic components.
