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Updated: Apr 6, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Tunable Spin-Qubit Coupling Mediated by a Multielectron Quantum Dot
V Srinivasa1, H Xu1, J M Taylor1
1Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, USA and National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Abstract:
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multielectron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood as the simplest manifestation of Ruderman-Kittel-Kasuya-Yosida exchange, and can be manipulated through gate voltage control of level splittings and tunneling amplitudes within the system. This provides both a high degree of tunability and a means for realizing high-fidelity two-qubit gates between spatially separated spins, yielding an experimentally accessible method of coupling donor electron spins in silicon via a hybrid impurity-dot system.
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