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Atomic Force Microscopy

Atomic Force Microscopy

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Related Experiment Video

Updated: Apr 6, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

Variable-angle high-angle annular dark-field imaging: application to three-dimensional dopant atom profiling.

Jack Y Zhang¹, Jinwoo Hwang¹, Brandon J Isaac¹

¹Materials Department, University of California, Santa Barbara, California 93106-5050, U. S. A.

Scientific Reports

|July 25, 2015

Summary

Variable-angle high-angle annular dark-field (HAADF) imaging precisely determines 3D dopant atom positions in materials. This advanced scanning transmission electron microscopy technique improves accuracy for analyzing atomic configurations.

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Last Updated: Apr 6, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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Published on: May 10, 2021

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Energy Dispersive X-ray Tomography for 3D Elemental Mapping of Individual Nanoparticles

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Published on: July 5, 2016

Area of Science:

Materials Science
Solid-State Physics
Electron Microscopy

Background:

Precise three-dimensional (3D) dopant atom configuration determination is crucial for advanced material properties.
Existing methods in scanning transmission electron microscopy (STEM) have limitations in accurately profiling dopant atoms in 3D.

Purpose of the Study:

To develop and validate a variable-angle high-angle annular dark-field (HAADF) imaging technique for enhanced 3D dopant profiling.
To assess the improvement in precision and accuracy of dopant atom localization using this novel method.

Main Methods:

Utilizing variable-angle HAADF imaging in STEM to analyze gadolinium (Gd)-doped strontium titanate (SrTiO3) thin films.
Employing two distinct collection angles for HAADF imaging to capture multi-angle data.
Conducting image simulations to validate experimental findings and assess measurement uncertainties.

Main Results:

Variable-angle HAADF imaging significantly enhances both the precision and accuracy of 3D dopant profiling.
Combining data from two collection angles reduces uncertainty in dopant depth position measurement.
Certain atomic configurations, indistinguishable with single-angle settings, can be uniquely identified.

Conclusions:

Variable-angle HAADF STEM is a powerful technique for precise 3D dopant atom mapping.
This method offers substantial improvements for analyzing complex atomic structures and dopant distributions in materials.
The technique has potential for broader applications in materials characterization and device engineering.