Crystal Orientation Dynamics of Collective Zn dots before Preferential Nucleation

Area of Science:

• Materials Science
• Surface Science
• Thin Film Growth

Background:

• Island nucleation in heterogeneous thin film growth is complex, influenced by kinetics and thermodynamics.
• Understanding the evolution of sputtered metal islands on semiconductor substrates is crucial for advanced material applications.

Purpose of the Study:

• To elucidate the growth evolution of sputtered zinc (Zn) islands on Si(111) using a combined experimental approach.
• To model the transition from kinetic to thermodynamic control during island nucleation and growth.

Main Methods:

• Utilized magnetron sputtering for Zn deposition on Si(111).
• Employed reflective second harmonic generation (RSHG) and 2D pole figure synchrotron X-ray diffraction for in-situ analysis.
• Investigated the subsequent oxidation of Zn islands to Zn/ZnO dots.

Main Results:

• Observed a transition in Zn island growth from kinetic to thermodynamic control.
• Tiny Zn islands initially adopted a tilted c-axis orientation favoring kinetic pathways.
• Islands evolved to a metastable state before achieving thermodynamic stability with a vertical c-axis.

Conclusions:

• The growth of sputtered Zn islands on Si(111) can be fully understood by combining RSHG and X-ray diffraction.
• Island orientation and growth dynamics are dictated by kinetic and thermodynamic factors, especially at small volumes and large lattice mismatches.