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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics

Yang Cui1, Run Xin1, Zhihao Yu1

  • 1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|August 11, 2015
PubMed
Summary

High-quality aluminum oxide dielectric and thiol chemistry passivation significantly boost charge transport in monolayer tungsten disulfide (WS2). This breakthrough achieves record mobilities, transitioning conductivity from insulating to metallic regimes.

Keywords:
interfacesmobilitytransition metal dichalcogenidestungsten disulfide (WS2)

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