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Related Experiment Video

Updated: Apr 5, 2026

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries

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Published on: April 22, 2013

Two-Dimensional Indium Selenides Compounds: An Ab Initio Study.

L Debbichi^1,2, O Eriksson², S Lebègue¹

¹†Laboratoire de Cristallographie, Résonance Magnétique et Modélisations (CRM2, UMR CNRS 7036) Institut Jean Barriol, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre-lès-Nancy, France.

The Journal of Physical Chemistry Letters

|August 13, 2015

Summary

This summary is machine-generated.

This study explores the electronic properties of indium selenide (InSe) and indium seselenide (In2Se3) 2D materials. Results show stable monolayers with tunable electronic behavior, suitable for electronic applications.

Keywords:

2D compounds In2Se3 InSe ab initio calculations electric field

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Area of Science:

Materials Science
Condensed Matter Physics
Computational Chemistry

Background:

Two-dimensional (2D) materials offer unique electronic and physical properties.
Indium selenides (InSe and In2Se3) are emerging materials with potential for electronic applications.
Understanding their electronic structure and stability is crucial for material development.

Purpose of the Study:

To investigate the electronic structure and stability of InSe and In2Se3 monolayers.
To determine the bandgaps and assess their suitability for electronic devices.
To explore the effect of external electric fields on their electronic properties.

Main Methods:

First-principle calculations were employed to model the materials.
The GW approximation, including spin-orbit coupling, was used for accurate bandgap prediction.
Analysis of interlayer binding energy and phonon dispersion confirmed dynamic stability.

Main Results:

Monolayers of InSe and In2Se3 exhibit dynamic stability, comparable to other 2D systems.
Calculated bandgaps fall within the range suitable for semiconductor electronics.
An applied electric field can induce a semiconductor-to-metal transition.

Conclusions:

Indium selenide monolayers are promising 2D materials for electronic applications.
Their stability and tunable electronic properties make them viable for device fabrication.
The electric-field-induced transition offers novel functionalities for electronic circuits.