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Updated: Apr 5, 2026

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
Enhanced conductivity of (110)-textured ScSZ films tuned by an amorphous alumina interlayer
Lei Yao1, Gang Ou, Hiroki Nishijima
1State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China. panw@mail.tsinghua.edu.cn.
Abstract:
Herein a novel strategy to tune the crystallite orientation and the ionic conductivity of solid electrolyte films through interfacial control has been reported. 10 mol% Sc2O3-doped ZrO2 (10ScSZ) thin films were prepared with an amorphous alumina (AO) interlayer (AO/10ScSZ) using magnetron sputtering. It has been found that a (110)-preferred orientation develops in AO/10ScSZ films annealed at 1000 °C due to a strong interfacial interaction, while 10ScSZ films deposited without the AO interlayer are (111)-textured. The (110)-oriented AO/10ScSZ films show an ionic conductivity nearly 4 times higher than that of the (111)-oriented 10ScSZ films. This is explained by the fact that the (110)-texture provides faster migration pathways with lower energy barrier for oxygen vacancies. These results reveal the relationship between the crystal structure and the conductivity of AO/ScSZ heterostructured films, which can facilitate the development of high-performance multilayered electrolytes and enable the miniaturization of solid-state electrochemical devices operable at temperatures below 600 °C.
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