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Single-longitudinal-mode Er:GGG microchip laser operating at 2.7  μm.

Zhenyu You, Yan Wang, Jinlong Xu

    Optics Letters
    |August 15, 2015
    PubMed
    Summary

    Researchers developed a compact Er:GGG microchip laser emitting at 2.7 µm. This diode-pumped laser achieved 50.8 mW output power and demonstrated potential as a mid-infrared source.

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    Area of Science:

    • Optics and Photonics
    • Laser Physics
    • Materials Science

    Background:

    • Mid-infrared lasers are crucial for spectroscopy and sensing.
    • Erbium-doped Gadolinium Gallium Garnet (Er:GGG) crystals offer potential for mid-infrared emission.
    • Microchip lasers provide compact and robust laser solutions.

    Purpose of the Study:

    • To investigate the performance of a diode-end-pumped Er:GGG microchip laser.
    • To characterize the output power, energy, and spectral properties of the laser.
    • To assess the beam quality of the developed laser source.

    Main Methods:

    • Utilized a 600-μm-thick Er:GGG crystal in a diode-end-pumped configuration.
    • Operated the microchip laser at repetition rates of 100, 200, and 300 Hz.

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  • Measured output power, pulsed energy, spectral characteristics (FWHM), and beam quality (M²).
  • Main Results:

    • Achieved a maximum output power of 50.8 mW and pulsed energy of 0.306 mJ.
    • Observed a maximum slope efficiency of 20.1%.
    • Demonstrated single-longitudinal mode operation at ~2704 nm with a FWHM of 0.42 nm and M² of 1.46.

    Conclusions:

    • The Er:GGG microchip laser operates efficiently in a single longitudinal mode.
    • The laser exhibits good beam quality, suitable for various applications.
    • This compact Er:GGG microchip laser is a promising source for mid-infrared applications.