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Measurement Back-Action in Stacked Graphene Quantum Dots.
D Bischoff1, M Eich1, O Zilberberg1
1Solid State Physics Laboratory and ‡Institute for Theoretical Physics, ETH Zurich , 8093 Zurich, Switzerland.
Nano Letters
|August 18, 2015
Summary
We investigated charge detector back-action in stacked graphene quantum dots. This revealed measurement-induced current via capacitive coupling and quantum effects, even in classically forbidden regimes.
Area of Science:
- Quantum electronics
- Condensed matter physics
- Graphene nanotechnology
Background:
- Quantum dots are crucial for quantum computing and electronics.
- Understanding charge detector back-action is key to controlling quantum systems.
Purpose of the Study:
- Investigate classical and quantum mechanical charge detector back-action on quantum dots.
- Explain measurement-induced current in a novel graphene device.
Main Methods:
- Fabricated stacked graphene quantum dots using van der Waals stacking.
- Utilized separate source/drain contacts for biased and unbiased dots.
- Analyzed transport phenomena under finite bias conditions.
Main Results:
- Observed induced current in an unbiased graphene quantum dot due to a biased one.
- Explained the current via strong capacitive coupling and energy-dependent tunneling barriers.
- Demonstrated transport in classically forbidden regimes through higher-order quantum back-action.
Conclusions:
- Graphene's unique properties enable novel quantum device functionalities.
- Capacitive coupling and quantum back-action are critical for understanding transport in such systems.
- The findings advance the control and design of graphene-based quantum devices.
