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No Graphene Etching in Purified Hydrogen
Saman Choubak1, Maxime Biron1, Pierre L Levesque2
1†Regroupement Québécois sur les Matériaux de Pointe (RQMP) and Département de Génie Physique, École Polytechnique de Montréal, Montréal, C. P. 6079, Succursale Centre-ville, Montréal, Québec H3C 2A7, Canada.
The Journal of Physical Chemistry Letters
|August 19, 2015
Summary
Purified hydrogen does not etch graphene on copper, but impurities like oxygen cause significant etching. This highlights the critical role of gas purity in graphene chemical vapor deposition (CVD) on copper substrates.
Area of Science:
- Materials Science
- Surface Chemistry
- Nanotechnology
Background:
- Graphene films are grown on copper foils using chemical vapor deposition (CVD).
- Understanding etching reactions is crucial for controlling graphene quality and CVD processes.
- The role of hydrogen in graphene etching on copper requires clarification.
Purpose of the Study:
- To systematically investigate the role of hydrogen in the etching of graphene films on copper.
- To determine if purified hydrogen etches graphene under specific conditions.
- To identify factors contributing to graphene etching during CVD on copper.
Main Methods:
- Graphene films grown on copper foils were exposed to purified ultrahigh purity (UHP)-grade hydrogen.
- Graphene films were also exposed to unpurified UHP-grade hydrogen.
- Experiments were conducted at 825 °C and 500 mTorr.
Main Results:
- Purified UHP-grade hydrogen showed no evidence of etching graphene films.
- Graphene films exposed to unpurified UHP-grade hydrogen exhibited considerable etching.
- Etching in unpurified hydrogen was attributed to the presence of oxygen or other oxidizing impurities.
Conclusions:
- Oxidizing impurities, not pure hydrogen, are the primary cause of graphene etching on copper.
- Controlling gas purity is essential for preventing unintended graphene etching during CVD.
- These findings are vital for optimizing graphene CVD processes on copper substrates.
