Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.5K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.5K
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

87
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
87
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

77
Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
77
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

96
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
96
Nucleotide Excision Repair01:08

Nucleotide Excision Repair

42.4K
Overview
42.4K
Nucleotide Excision Repair01:38

Nucleotide Excision Repair

5.8K
DNA Distortion and Damage
Cells are regularly exposed to mutagens—factors in the environment that can damage DNA and generate mutations. UV radiation is one of the most common mutagens and is estimated to introduce a significant number of changes in DNA. These include bends or kinks in the structure, which can block DNA replication or transcription. If these errors are not fixed, the damage can cause mutations, which in turn can result in cancer or disease depending on which sequences are...
5.8K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Reinventing Density Functional Theory with Machine Learning on Integral Features.

Journal of chemical theory and computation·2026
Same author

Nonadiabatic dynamics starting from reactant and transition state in luminol chemiluminescence.

The Journal of chemical physics·2026
Same author

Photoinduced Charge Transfer and Vibronic Coherence in CdSe Quantum Dots with Methyl Viologen Acceptors.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
Same author

Dynamics of Electronically Inelastic and Reactive Collisions of O(<sup>1</sup>D) with N<sub>2</sub> Based on Machine-Learned Coupled Potential Energy Surfaces.

Journal of chemical theory and computation·2026
Same author

Simulating Electron Dynamics with GPU-Accelerated Real-Time Tamm-Dancoff Approximation.

Journal of chemical theory and computation·2026
Same author

New Framework for Multi-Electronic-State Dynamics and Its Validation for Photoisomerization of 1,3-Cyclohexadiene.

Journal of chemical theory and computation·2026
Same journal

Correction to "Ultrasonication-Triggered Ubiquitous Assembly of Magnetic Janus Amphiphilic Nanoparticles in Cancer Theranostic Applications".

Nano letters·2026
Same journal

Tunable Proximity Valley Splitting Via Interfacial Exchange Pinning in WSe<sub>2</sub>-CrBr<sub>3</sub>-CrPS<sub>4</sub> Heterostructures.

Nano letters·2026
Same journal

Nanoscale Organization of Membrane Tension during Neutrophil Extracellular Trap Formation Revealed by Fluorescence Lifetime Imaging.

Nano letters·2026
Same journal

Pressure-Tuned Plasmonic Propagation on a Silver Nanowire.

Nano letters·2026
Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026
Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Apr 5, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.6K

Defect-Induced Conical Intersections Promote Nonradiative Recombination.

Yinan Shu1, B Scott Fales1, Benjamin G Levine1

  • 1Department of Chemistry, Michigan State University , East Lansing, Michigan 48824, United States.

Nano Letters
|August 21, 2015
PubMed
Summary
This summary is machine-generated.

Conical intersections in oxidized silicon nanocrystals facilitate nonradiative recombination, a process accelerated in smaller particles. This study introduces a new method for identifying defects causing this recombination.

Keywords:
Nonradiative recombinationconical intersectiongraphics processing unitssilicon nanoparticlessilicon−silicon oxide interfacetrap state

More Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.8K
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.8K

Related Experiment Videos

Last Updated: Apr 5, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.6K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.8K
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.8K

Area of Science:

  • Materials Science
  • Quantum Chemistry
  • Nanotechnology

Background:

  • Silicon nanocrystals are crucial for optoelectronic applications.
  • Oxidized silicon surfaces often contain defects that influence electronic properties.
  • Nonradiative recombination is a key factor limiting luminescence efficiency in nanomaterials.

Purpose of the Study:

  • To investigate the electronic states of silicon nanocrystals with surface oxidation defects.
  • To identify mechanisms responsible for nonradiative recombination in these systems.
  • To develop a framework for defect identification in silicon nanocrystals.

Main Methods:

  • Multireference electronic structure calculations were employed.
  • The study focused on three silicon nanocrystal models with characteristic oxidized surface defects.
  • Calculations analyzed the ground and first excited electronic states.

Main Results:

  • Conical intersections were identified between the ground and first excited electronic states.
  • These intersections are accessible via visible light excitation.
  • The rate of nonradiative recombination increases as nanocrystal size decreases.

Conclusions:

  • Conical intersections play a significant role in nonradiative recombination in oxidized silicon nanocrystals.
  • Defect-induced conical intersections are size-dependent, impacting recombination rates.
  • A novel computational framework is presented for identifying recombination-driving defects in silicon nanomaterials.