Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots
Seung Won Shin1, Kwang-Ho Lee2, Jin-Seong Park2
1Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University , 1732 Deogyeong-daero, Giheung-gu, Yongin, Gyeonggi-do 446-701, Republic of Korea.
Abstract:
Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.
