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Indirect-Acting Cholinergic Agonists: Mechanism of Action01:18

Indirect-Acting Cholinergic Agonists: Mechanism of Action

Indirect-acting cholinergic agonists work by interacting with an enzyme called acetylcholinesterase (AChE) in the synaptic cleft. They can be reversible or irreversible inhibitors and have different effects on the enzyme.
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Indirect-acting cholinergic agonists are agents that interact with the acetylcholinesterase enzyme in the synaptic cleft, preventing the breakdown of acetylcholine into choline and acetate. Consequently, the concentration of acetylcholine in the synaptic cleft increases. These agonists can be classified into reversible and irreversible inhibitors based on their duration of action.
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Dose-Response Relationship: Selectivity and Specificity01:25

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Direct-Acting Cholinergic Agonists: Pharmacokinetics01:31

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Direct-acting cholinergic agonists, such as synthetic choline esters and naturally occurring alkaloids, exert their effects by enhancing the actions of acetylcholine and stimulating the parasympathetic nervous system. Synthetic choline esters share structural similarities with acetylcholine. For example, they have a positively charged quaternary ammonium or onium group, contributing to their hydrophilic characteristics. As a result, they are poorly absorbed in the body through oral...
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Introduction
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Related Experiment Video

Updated: May 17, 2026

Modification and Functionalization of the Guanidine Group by Tailor-made Precursors
09:45

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Published on: April 27, 2017

Backbone-Length-Optimized Inhibitors Deliver Long-Retention Selectivity in Area-Selective ALD of VO2.

Hae Lin Yang1, Eun Chong Cho2, Minchan Kim1

  • 1Division of Materials Science and Engineering, Hanyang University, Seoul, Republic of Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|May 15, 2026
PubMed
Summary
This summary is machine-generated.

Designing small-molecule inhibitors (SMIs) for area-selective atomic-layer deposition (AS-ALD) is now predictable. Optimizing SMI backbone length balances adsorption and steric effects for enhanced VO2 AS-ALD selectivity.

Keywords:
adsorption behaviorarea‐selective atomic‐layer depositionsmall‐molecule inhibitorsteric hindrancevanadium oxide

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Area-selective atomic-layer deposition (AS-ALD) requires effective surface inhibitors for precise material patterning.
  • Current molecular design of inhibitors is empirical, lacking a predictive framework linking structure to performance.

Purpose of the Study:

  • To systematically investigate how the carbon-backbone length of trimethoxyphenyl(alkyl)silane small-molecule inhibitors (SMIs) impacts adsorption and selectivity in VO2 AS-ALD.
  • To establish a predictive design principle for SMIs in AS-ALD based on chemical and geometric factors.

Main Methods:

  • Density Functional Theory (DFT) calculations to model SMI adsorption pathways on hydroxylated SiO2.
  • Random sequential adsorption (RSA) simulations to predict surface coverage based on molecular packing and steric exclusion.
  • Experimental validation using VO2 AS-ALD with varying SMI backbone lengths.

Main Results:

  • SMI adsorption involves physisorption and multi-step chemisorption, with longer backbones favoring physisorption but hindering stable chemisorption due to steric hindrance.
  • Surface coverage shows a non-monotonic dependence on backbone length, determined by a balance between packing density and steric exclusion.
  • Intermediate-length SMIs demonstrated the highest selectivity (>90%) in VO2 AS-ALD experiments over extended cycles.

Conclusions:

  • A predictive, chemically and geometrically grounded design principle for SMIs in AS-ALD has been established.
  • Optimizing SMI backbone length is crucial for achieving high selectivity in area-selective atomic-layer processing.
  • This framework advances the rational design of molecular inhibitors for advanced nanofabrication techniques.