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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Complex Internal Bias Fields in Ferroelectric Hafnium Oxide.

Tony Schenk1, Michael Hoffmann1, Johannes Ocker1

  • 1NaMLab gGmbH , Noethnitzer Strasse 64, D-01187 Dresden, Germany.

ACS Applied Materials & Interfaces
|August 27, 2015
PubMed
Summary

Hafnia- and zirconia-based ferroelectrics exhibit complex electric field cycling behaviors. First-order reversal curves reveal internal bias fields vanish during wake-up, while fatigue affects domain switching and local biases influence split-up effects.

Keywords:
electric field cycling behaviorferroelectricfirst-order reversal curveshafnium oxideinternal bias fields

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • Hafnia- and zirconia-based ferroelectrics are emerging materials with unsettled questions regarding their electric field cycling behavior.
  • Key phenomena include wake-up, fatigue, and subcycling-induced split-up/merging of transient current peaks.

Purpose of the Study:

  • To investigate the evolution of switching and backswitching field distributions in ferroelectric films under electric field cycling.
  • To analyze the impact of wake-up, fatigue, and split-up effects on ferroelectric properties using the Preisach model.

Main Methods:

  • Application of first-order reversal curves (FORCs) to analyze ferroelectric behavior.
  • Utilizing the Preisach model to interpret the switching and backswitching field distributions.
  • Studying three distinct phenomena: pristine film behavior, fatigue, and the split-up effect.

Main Results:

  • Pristine films show oppositely biased regions that diminish during wake-up cycling.
  • Fatigue leads to a decrease in switchable domains and a slight increase in the mean switching field.
  • The split-up effect is linked to local bias fields influenced by cycling treatment and measurement procedures.

Conclusions:

  • Internal bias fields play a crucial role in the observed phenomena in ferroelectric films.
  • Understanding wake-up is essential for optimizing low-voltage operation of ferroelectric memories for high endurance and stable polarization.
  • FORCs provide valuable insights into the complex dynamics of ferroelectric switching and fatigue.