Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

96
A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
96
Thermal Sigmatropic Reactions: Overview01:16

Thermal Sigmatropic Reactions: Overview

2.7K
Sigmatropic rearrangements are a class of pericyclic reactions in which a σ bond migrates from one part of a π system to another. These are intramolecular rearrangements where the total number of σ and π bonds remain unchanged.
Sigmatropic shifts are classified based on an order term [i, j ], where i and j indicate the number of atoms across which each end of the σ bond migrates. Below are examples of a [3,3] sigmatropic shift in 1,5-hexadiene, referred...
2.7K
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

87
Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
87
Transformation of Plane Strain01:12

Transformation of Plane Strain

624
When analyzing elongated structures like bars subjected to uniformly distributed loads, it is essential to understand the transformation of plane strain when coordinate axes are rotated. This transformation helps to assess how material deformation characteristics vary with orientation, which is crucial in materials science and structural engineering.
Under plane strain conditions, typical for members where one dimension significantly exceeds the others, deformations and resultant strains are...
624
Microtubule Instability02:17

Microtubule Instability

6.5K
Microtubules are hollow cylindrical filaments having a diameter of approximately 25 nm and a length that varies from 200 nm to 25 μm. GTP-bound tubulin subunits form αβ-heterodimers for microtubule assembly. These core building blocks interact longitudinally, polymerizing into protofilaments. The protofilaments then interact with one another through lateral bonding forces to form stable cylindrical microtubules. These cylindrical filaments are dynamic as they undergo repeated...
6.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Atomic Evolution of Hydrogen Intercalation Wave Dynamics in Palladium Nanocrystals Revealed by Liquid-Phase Transmission Electron Microscopy.

Journal of the American Chemical Society·2026
Same author

Complete Phase Transformation of Ir Nanowire Network into Defect-Rich Oxide Catalyst for High-Performance PEM Water Electrolysis.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Nanocrystal Geometry Governs Phase Transformation Pathways in Palladium Hydride.

ACS nano·2026
Same author

A molecular pathway to corrosion-resistant printable copper.

Science (New York, N.Y.)·2026
Same author

Detective quantum efficiency of the Timepix4 hybrid pixel detector and its application to parallel-beam diffraction.

Ultramicroscopy·2026
Same author

Tracking the Evolution of Iridium Nanocatalysts During Acidic Oxygen Evolution Reaction by Substrate-Stabilized Identical-Location Transmission Electron Microscopy.

Small methods·2026
Same journal

High Pressure Synthesis of Ultrasmall Nanodiamonds with Nitrogen Vacancy Centers.

Nano letters·2026
Same journal

Efros-Shklovskii Law at the Thinnest Limit of a Material.

Nano letters·2026
Same journal

Oxygen Electronic Configuration Modulation Triggering Reversible Anionic Redox Chemistry toward High Voltage Tolerant Sodium Layered Oxide.

Nano letters·2026
Same journal

Development of a Nanoscale Protein-Protein Mapping of PDE4 Interface-Disrupting Peptides.

Nano letters·2026
Same journal

Lubricin-Protected Plasmonic Nanoslides Enable Stable, Reusable, Nonfouling, and Ultrasensitive Biomimetic-SERS Sensing for the Detection of Vancomycin in Unprocessed Whole Blood.

Nano letters·2026
Same journal

Forcing a Molecule to Switch: Quantifying Mechanical Control at the Atomic Scale.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Apr 4, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.8K

Partial Dislocations in Graphene and Their Atomic Level Migration Dynamics.

Alex W Robertson1, Gun-Do Lee2, Kuang He1

  • 1Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.

Nano Letters
|August 28, 2015
PubMed
Summary
This summary is machine-generated.

Partial dislocations form in graphene at high temperatures (≥500 °C), redistributing strain and enabling low-energy migration. This reveals key insights into graphene

Keywords:
GrapheneTEMdefectsdislocations

More Related Videos

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.8K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.6K

Related Experiment Videos

Last Updated: Apr 4, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.8K
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.8K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.6K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene exhibits unique mechanical properties.
  • Understanding high-temperature behavior is crucial for applications.
  • Dislocations influence material plasticity.

Purpose of the Study:

  • To investigate the formation and behavior of partial dislocations in graphene at elevated temperatures.
  • To elucidate the atomistic mechanisms of strain redistribution and migration.
  • To provide insights into graphene's high-temperature plasticity.

Main Methods:

  • Utilizing single-atom resolution aberration-corrected transmission electron microscopy (TEM).
  • Observing graphene samples at temperatures of 500 °C and above.
  • Analyzing dislocation structures and their dynamics.

Main Results:

  • Demonstrated the formation of partial dislocations in graphene at ≥500 °C.
  • Observed spatial redistribution of strain by partial dislocations.
  • Identified low-energy migration paths mediated by partial dislocation formation.
  • Provided atomistic insights into graphene dynamics during annealing.

Conclusions:

  • Partial dislocations offer a more energetically favorable configuration than perfect dislocations in graphene.
  • The findings are critical for understanding graphene's high-temperature plasticity.
  • This research informs the behavior of partial dislocations in related materials like diamond cubic systems.