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Updated: Apr 4, 2026

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Published on: June 19, 2018
A study of X-ray multiple diffraction by means of section topography
1National Research Centre `Kurchatov Institute', 123182 Moscow, Russian Federation.
X-ray multiple diffraction in silicon crystals significantly alters interference fringes in section topography. Computer simulations accurately predict complex fringe structures and their sharp dependence on azimuthal angles.
Area of Science:
- Solid State Physics
- Crystallography
- Materials Science
Background:
- X-ray diffraction is crucial for analyzing crystal structures.
- Section topography visualizes crystal defects and strain.
- Multiple diffraction phenomena can complicate X-ray analysis.
Purpose of the Study:
- To investigate the influence of X-ray multiple diffraction on section topography fringes in silicon.
- To analyze specific multiple diffraction cases at low azimuthal angles.
- To validate experimental findings with accurate computer simulations.
Main Methods:
- Theoretical calculations of X-ray diffraction.
- Experimental section topography using a laboratory X-ray source.
- Computer simulations of section topograms under multiple diffraction conditions.
Main Results:
- Two distinct multiple diffraction cases were identified at zero and near-zero azimuthal angles.
- Computer simulations revealed complex interference fringe structures in multiple diffraction regions.
- Experimental results showed a characteristic fringe inclination, matching simulations.
Conclusions:
- X-ray multiple diffraction profoundly impacts section topography fringe patterns in silicon.
- The azimuthal angle critically influences fringe structure under multiple diffraction.
- Accurate simulations are vital for interpreting complex X-ray diffraction topograms.
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