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Proximity-Driven Enhanced Magnetic Order at Ferromagnetic-Insulator-Magnetic-Topological-Insulator Interface
Mingda Li1,2,3, Cui-Zu Chang2, Brian J Kirby4
1Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
Abstract:
Magnetic exchange driven proximity effect at a magnetic-insulator-topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb(2-x)V(x)Te3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
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