Related Experiment Video
Updated: Apr 4, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Phase Transition Experimental and Theoretical Study of Micro Power Generator Supplying Source for CMOS Chip Based on
Abstract:
We demonstrated both experimentally and in theory analysis and calculation that the tin-modified lead zirconate titanate nanoporous ferroelectric generator system can perform as a micro-power supplying source for CMOS chip. The ferroelectric ceramic phase transition under transverse shock wave compression can charge external storage capacitor. The nanoporous microstructure ferro-electric ceramic micro-pulsed-power system is capable of generating low output voltage pulses and supplying CMOS chip with micro power sources. We developed the methodology for theory analysis and experimental operation of the ferroelectric generator. Analysis of the porous ferroelectric ceramic material was carried out by X-ray diffractometry and X-ray photoelectron spectroscopy. Microstructures and surface morphology of porous ferroelectric ceramics samples were examined by using scanning electron microscopy. The planar shock wave experiments were conducted on a compressed-gas gun. The experimental results were in good agreement with the theory analysis. Keywords: PSZT Ferroelectric Ceramic, Shock Wave, Phase Transition, Depolarization, Micro-Power-Generator.
More Related Videos
10:39Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal
Published on: January 15, 2016
10:40A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...