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Updated: Apr 4, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Current Scaling and Dirac Fermion Heating in Multi-Layer Graphene
Abstract:
We have performed transport measurements on a multi-layer graphene device fabricated by conventional mechanical exfoliation. By using the zero-field resistance of our graphene device as a self-thermometer, we are able to determine the effective Dirac fermion temperature TDF at various driving currents I while keeping the lattice constant fixed. Interesting, it is found that TDF is proportional to Ia where a ~ 1. According to theoretical and experimental studies, the exponent a is given by 2/(2+p) where the charge-phonon scattering rate 1/τph is proportional to TP. Therefore our results yield p ~ 0, suggesting that there is little Dirac fermion-phonon scattering, a great advantage for applications in nanoelectronics.
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