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Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor
Journal of Nanoscience and Nanotechnology
|September 16, 2015
Summary
Benzocyclobutene (BCB) polymer improves graphene field-effect transistor (GFET) performance by acting as a buffer layer. This enhances large-scale GFETs fabricated on Si/SiO2 substrates, achieving high cutoff frequencies.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Interfaces in dielectric/graphene or substrate/graphene affect field-effect transistor (FET) performance due to scattering and trapping effects.
- Optimizing these interfaces is crucial for enhancing graphene field-effect transistor (GFET) characteristics.
Purpose of the Study:
- To investigate the use of benzocyclobutene (BCB) as an amphibious buffer layer to improve GFET performance.
- To prepare large-scale, top-gated, chemical vapor deposited (CVD) graphene transistors on Si/SiO2 substrates using BCB.
Main Methods:
- Utilized benzocyclobutene (BCB), a nonpolar and hydrophobic polymer, as a buffer layer between substrate/graphene and dielectric/graphene interfaces.
- Fabricated large-scale, top-gated GFETs on Si/SiO2 substrates.
Main Results:
- The BCB buffer layer effectively mitigated scattering and trapping effects at the interfaces.
- Achieved high performance metrics for the fabricated GFETs, including a cutoff frequency (fT) of 12 GHz and a maximum cutoff frequency (fmax) of 11 GHz.
Conclusions:
- The nonpolar and hydrophobic BCB buffer layer is a promising strategy for enhancing the performance of large-scale CVD GFETs.
- This approach enables the fabrication of high-frequency GFETs suitable for advanced electronic applications.
