High Internal Gain Axial SiOx-In2-xO3-y/Au Heterostructure Nanocolumnar Array Based Schottky Detector for Broad Band
Abstract:
Glancing angle deposition (GLAD) was employed to fabricate the SiOx-In2-xO3-y axial heterostructure nanocolumn. The fabricated heterostructure nanocolumn was annealed at 550 °C for 1 hour at open air condition. The XRD analysis revealed the polycrystalline nature of the annealed SiOx-In2-xO3-y nanocolumn. The emission at 378 nm (~3.3 eV, FWHM 39.101 nm) from Photoluminescence (PL), corresponds to main band gap of In2O3. The In2-xO3-y-SiOx nanocolumn based Schottky detector processed maximum photoresponsivity of 199 A/W at 375 nm, as well as UV-Vis broad band detection. The high internal gain of ~659 at UV region (375 nm) was calculated for the device. The detector exhibited increase in photoresponsivity with decrease in room temperature upto 160 K, which further reduced at low temperature. A very sharp rise time (~1.82 s) and decay time (~1.78 s) was recorded at the applied potential of -2 V and -3 V.
