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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
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Suspended graphene devices with local gate control on an insulating substrate
Florian R Ong1, Zheng Cui, Muhammet A Yurtalan
1Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada.
Nanotechnology
|September 18, 2015
Summary
We developed a new method to fabricate suspended graphene devices with a local metallic gate. This technique allows for field-effect modulation of graphene resistivity at low temperatures, enabling novel quantum and mechanical applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene's unique electronic properties make it promising for advanced devices.
- Existing fabrication methods can be complex and limit device functionality.
Purpose of the Study:
- To present a novel fabrication process for suspended graphene devices with integrated local gates.
- To demonstrate the functionality of these devices, specifically a graphene field-effect transistor.
Main Methods:
- Fabrication of graphene monolayer devices on a high-resistivity silicon substrate.
- Integration of a local metallic gate within a trench beneath the suspended graphene.
- Characterization of device performance at cryogenic temperatures (77 K and below).
Main Results:
- Successful fabrication of suspended graphene field-effect transistors.
- Observation of clear field-effect modulation of graphene resistivity by the local gate voltage at low temperatures.
- Demonstration of a viable fabrication approach for advanced graphene-based systems.
Conclusions:
- The presented fabrication process enables precise control over graphene's electronic properties.
- This method opens avenues for new research in graphene-based superconducting qubits and nano-electromechanical systems.
- The technique is adaptable for other two-dimensional materials.
