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Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Xiaoming Yuan1, Philippe Caroff1, Jennifer Wong-Leung1
1Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia.
Advanced Materials (Deerfield Beach, Fla.)
|September 18, 2015
Abstract:
Controllable axial switching of polarity in GaAs nanowires with minimal tapering and perfect twin-free ZB structure based on the fundamental understanding of nanowire growth and kinking mechanism is presented. The polarity of the bottom segment is confirmed to be (111)A by atomically resolved scanning transmission electron microscopy.

