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Designing switchable polarization and magnetization at room temperature in an oxide
P Mandal1, M J Pitcher1, J Alaria2
1Department of Chemistry, University of Liverpool, Liverpool L69 7ZD, UK.
Nature
|September 19, 2015
Summary
Researchers developed a novel bulk perovskite oxide combining ferroelectricity and ferromagnetism at room temperature. This breakthrough enables low-power, high-density data storage with fast electrical writing and magnetic reading capabilities.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Ferroelectric and ferromagnetic materials are key for non-volatile memory but have limitations.
- Magnetoelectric multiferroic materials offer potential for low-power, high-density storage with combined electrical writing and magnetic reading.
- Synthesizing room-temperature multiferroics with both ferroelectricity and ferromagnetism in a single crystal is challenging due to opposing atomic requirements.
Purpose of the Study:
- To overcome the challenges in synthesizing room-temperature multiferroic materials.
- To develop a novel bulk perovskite oxide exhibiting both ferroelectricity and ferromagnetism.
- To enable fast electrical writing and magnetic reading for advanced data storage applications.
Main Methods:
- Constructed a percolating network of magnetic ions within a structural scaffold.
- Utilized a morphotropic phase boundary to enhance polarization switching and magnetic moment canting.
- Employed crystal engineering of perovskite oxides.
Main Results:
- Achieved room-temperature ferroelectricity and ferromagnetism in a bulk perovskite oxide.
- Demonstrated enhanced polarization switching and permitted canting of ordered magnetic moments.
- Created a material combining switchable polarization with long-range magnetic order.
Conclusions:
- The developed strategy allows for the creation of tunable multiferroic materials.
- This approach overcomes previous limitations in synthesizing single-phase room-temperature multiferroics.
- The findings pave the way for next-generation data storage technologies.

