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Inverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO_{2} Films.

Z Q Wang1, Z Q Li2,3, L Sun1

  • 1National Laboratory of Solid State Microstructures, Department of Physics, <a href="https://ror.org/01rxvg760">Nanjing University</a> and <a href="https://ror.org/04ttadj76">Collaborative Innovation Center of Advanced Microstructures</a>, Nanjing 210093, People's Republic of China.

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Summary
This summary is machine-generated.

This study compares spin-charge conversion in RuO2 films, finding the (110) surface is isotropic and stronger, driven by the inverse spin Hall effect. Results contrast prior attributions, confirmed by spin pumping and spin-torque measurements.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Spin-charge conversion is crucial for spintronic devices.
  • Understanding material-specific mechanisms is key for optimizing spin-charge conversion efficiency.

Purpose of the Study:

  • To comparatively investigate spin-charge conversion in RuO2(101) and RuO2(110) films.
  • To elucidate the underlying physical mechanisms responsible for spin-charge conversion in these materials.

Main Methods:

  • Spin pumping experiments.
  • Spin-torque ferromagnetic resonance (ST-FMR) measurements.
  • Symmetry-based analysis and first-principles calculations.

Main Results:

  • RuO2(101) films exhibit robust in-plane crystal-axis dependence.
  • RuO2(110) films show isotropic but stronger spin-charge conversion.
  • Inverse spin Hall effect (ISHE) dominates in both films, with potential coexistence of inverse spin splitting effect (ISSE) in RuO2(101).
  • Nodal line splitting in RuO2(110) is identified as the origin of ISHE.

Conclusions:

  • The dominant mechanism for spin-charge conversion in RuO2 films is the ISHE.
  • Findings challenge previous attributions of ISSE as the primary mechanism.
  • Reciprocal measurements confirm the spin pumping and ST-FMR results, providing robust evidence for the identified mechanisms.