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Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
Scientific Reports
|September 24, 2015
Summary
Researchers developed a novel step quantum well for AlGaN/GaN infrared detectors. This design overcomes polarization-induced fields, enabling efficient carrier transport and photocurrent detection.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Materials Science
Background:
- AlGaN/GaN quantum structures are promising for high-speed infrared detectors.
- Polarization-induced electric fields hinder carrier transport in conventional quantum wells.
- Efficient carrier vertical transport is crucial for detector performance.
Purpose of the Study:
- To address the limitations of polarization-induced electric fields in AlGaN/GaN quantum well infrared detectors.
- To propose a novel step quantum well design for improved carrier transport.
- To achieve a functional infrared detector operating in the 3-5 μm atmospheric window.
Main Methods:
- Fabrication of AlGaN/GaN step quantum wells.
- Incorporation of a novel spacer barrier layer to balance the internal electric field.
- Characterization of the quantum well potential profile and device performance.
Main Results:
- A nearly flat band potential profile was achieved in the step barrier layers.
- A bound-to-quasi-continuum (B-to-QC) type intersubband device was successfully fabricated.
- Detectable photocurrent was observed in the 3-5 μm atmospheric window.
Conclusions:
- The proposed step quantum well effectively mitigates polarization-induced electric fields.
- This design enables efficient carrier vertical transport in AlGaN/GaN heterostructures.
- The developed device demonstrates potential for high-speed infrared detection applications.
