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Low-loss passive waveguides in a generic InP foundry process via local diffusion of zinc
Optics Express
|September 26, 2015
Summary
Researchers reduced waveguide loss in indium phosphide (InP) integrated photonics by over 80% using a localized zinc diffusion process. This breakthrough enables higher performance photonic devices with significantly lower signal attenuation.
Area of Science:
- Materials Science
- Optoelectronics
- Photonics Engineering
Background:
- Indium phosphide (InP) foundry processes enable monolithic integration of active and passive photonic components.
- Passive optical loss in InP waveguides is a significant limitation for device performance.
- Current processes often dope entire layerstacks, increasing passive loss.
Purpose of the Study:
- To develop a method for reducing passive optical loss in InP waveguides.
- To investigate the impact of localized doping on waveguide performance.
- To demonstrate improved device metrics through optimized doping strategies.
Main Methods:
- Implementation of a localized zinc (Zn) diffusion process using Metalorganic Vapor Phase Epitaxy (MOVPE).
- Fabrication of a 73 mm long spiral ring resonator.
- Characterization of waveguide loss and resonator performance.
Main Results:
- Waveguide loss reduced from 2 dB/cm to below 0.4 dB/cm.
- Achieved a record quality factor (Q) of 1.2 million for the spiral ring resonator.
- Demonstrated an extinction ratio of 9.7 dB.
Conclusions:
- Localized p-dopant confinement significantly reduces passive optical loss in InP waveguides.
- The developed MOVPE-based Zn-diffusion process is effective for high-performance photonic integration.
- The achieved Q factor and extinction ratio highlight the potential for advanced photonic devices.
