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Updated: Apr 2, 2026

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings
Published on: April 16, 2017
High speed, high temperature electrical characterization of phase change materials: metastable phases,
Faruk Dirisaglik1, Gokhan Bakan, Zoila Jurado
1Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA. faruk.dirisaglik@uconn.edu gokirmak@engr.uconn.edu.
Abstract:
During the fast switching in Ge2Sb2Te5 phase change memory devices, both the amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal transition temperatures respectively. In this work, the metastable electrical properties together with crystallization times and resistance drift behaviour of GST are studied using a high-speed, device-level characterization technique in the temperature range of 300 K to 675 K.

